| PART |
Description |
Maker |
| PBRP113ZT PBRP113ZT215 |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| PBSS5160U PBSS5160U115 |
60 V, 1 A PNP low VCEsat (BISS) transistor; Package: SOT323 (SC-70); Container: Tape reel smd 800 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS5250T PBSS5250T215 |
50 V; 2 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
50 V, 2 A PNP low VCEsat (BISS) transistor
50 V 2 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PBSS303PX |
30 V, 5.1 A PNP low VCEsat (BISS) transistor 30伏，6安PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS5130T |
30 V; 1 A PNP low VCEsat (BISS) transistor 30伏，1PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBRN123E PBRN123EK PBRN123ES PBRN123ET |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k? R2 = 2.2 k?
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 2.2 k??
|
NXP Semiconductors
|
| PBSS5160PAP |
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS5260PAP |
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBLS2004D |
20 V PNP BISS loadswitch
|
NXP Semiconductors
|
| PBLS2001S |
20 V PNP BISS loadswitch
|
NXP Semiconductors
|
| PBLS6004D |
60 V PNP BISS loadswitch
|
NXP Semiconductors
|
| PBLS1503V PBLS1503Y |
15 V PNP BISS loadswitch
|
NXP Semiconductors
|
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